Gate-Tunable Spin xor Operation in a Silicon-Based Device at Room Temperature
نویسندگان
چکیده
منابع مشابه
SPIN-PUMPING-INDUCED SPIN TRANSPORT IN p-TYPE SILICON AT ROOM TEMPERATURE
Spin transport in inorganic semiconductors provides an indispensable building block for realizing the so-called beyond-CMOS technologies. Since the spin-orbit interaction in silicon (Si) is essentially small, Si-based functional devices using the spin degree of freedom is recognized to be promising with respect to spin coherence. Although spin transport at room temperature (RT) in n-Si has been...
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ژورنال
عنوان ژورنال: Physical Review Applied
سال: 2020
ISSN: 2331-7019
DOI: 10.1103/physrevapplied.13.044010